PIBD Fotoellenállás LDR
DE920-4J
12 400,00 Ft
Áfa nélkül
Silicon photo resistor with PN junction, suitable for use as a diode (20 V cut-off voltage)
Light-sensitive surface area: 4.84 mm²
Photoelectric current increase and decay time: 20 ns
Resistance in the dark at approx.10 V: >1 Gohm
Light-sensitive surface area: 4.84 mm²
Photoelectric current increase and decay time: 20 ns
Resistance in the dark at approx.10 V: >1 Gohm